SI3812DV-T1-E3

Part NumberSI3812DV-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 2A 6-TSOP

DatasheetSI3812DV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 2A (Ta) 830mW (Ta) Surface Mount 6-TSOP

To learn about the specification of SI3812DV-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3812DV-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3812DV-T1-E3.
We are offering SI3812DV-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3812DV-T1-E3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SI3812DV

Standard Package

Manufacturer

Vishay Siliconix

Series

LITTLE FOOT®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

125mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id

600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

4nC @ 4.5V

Vgs (Max)

±12V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

830mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

All categories