SI3588DV-T1-GE3

Part NumberSI3588DV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N/P-CH 20V 2.5A 6-TSOP

DatasheetSI3588DV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel 20V 2.5A, 570mA 830mW, 83mW Surface Mount 6-TSOP

To learn about the specification of SI3588DV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3588DV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3588DV-T1-GE3.
We are offering SI3588DV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3588DV-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

SI3588DV

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.5A, 570mA

Rds On (Max) @ Id, Vgs

80mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

Power - Max

830mW, 83mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP

Base Part Number

SI3588

All categories