SI3529DV-T1-E3

Part NumberSI3529DV-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N/P-CH 40V 2.5A 6-TSOP

DatasheetSI3529DV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel 40V 2.5A, 1.95A 1.4W Surface Mount 6-TSOP

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SI3529DV-T1-E3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

SI3529DV

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

2.5A, 1.95A

Rds On (Max) @ Id, Vgs

125mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

205pF @ 20V

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP

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