SI3475DV-T1-GE3

Part NumberSI3475DV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 200V 0.95A 6-TSOP

DatasheetSI3475DV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 200V 950mA (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP

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SI3475DV-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SI3475DV

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

950mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

1.61Ohm @ 900mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

500pF @ 50V

FET Feature

Power Dissipation (Max)

2W (Ta), 3.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

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