SI3460BDV-T1-GE3
SI3460BDV-T1-GE3
Part Number SI3460BDV-T1-GE3 Description MOSFET N-CH 20V 8A 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP
To learn about the specification of SI3460BDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3460BDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3460BDV-T1-GE3.
We are offering SI3460BDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI3460BDV-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI3460BDV Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 27mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 860pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta), 3.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6
SI3460BDV-T1-GE3 - Related ProductsMore >>
BSS138W-7-F Diodes Incorporated, N-Channel 50V 200mA (Ta) 200mW (Ta) Surface Mount SOT-323,
View
FDD5N50TM-WS ON Semiconductor, N-Channel 500V 4A (Tc) 40W (Tc) Surface Mount D-Pak, UniFET™
View
IPD25N06S4L30ATMA2 Infineon Technologies, N-Channel 60V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11, Automotive, AEC-Q101, OptiMOS™
View
SUG90090E-GE3 Vishay Siliconix, N-Channel 200V 100A (Tc) 395W (Tc) Through Hole TO-247AC, ThunderFET®
View
SIHF7N60E-GE3 Vishay Siliconix, N-Channel 600V 7A (Tc) 31W (Tc) Through Hole TO-220 Full Pack,
View
BSZ440N10NS3GATMA1 Infineon Technologies, N-Channel 100V 5.3A (Ta), 18A (Tc) 29W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
View
IPN70R600P7SATMA1 Infineon Technologies, N-Channel 700V 8.5A (Tc) 6.9W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
View
DMT10H025SSS-13 Diodes Incorporated, N-Channel 100V 7.4A (Ta) 1.4W (Ta) Surface Mount 8-SO,
View
IXTH30N60L2 IXYS, N-Channel 600V 30A (Tc) 540W (Tc) Through Hole TO-247 (IXTH), Linear L2™
View
SIR470DP-T1-GE3 Vishay Siliconix, N-Channel 40V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
PSMN2R0-30BL,118 Nexperia USA Inc., N-Channel 30V 100A (Tc) 211W (Tc) Surface Mount D2PAK,
View
TSM60NB380CF C0G Taiwan Semiconductor Corporation, N-Channel 600V 11A (Tc) 62.5W (Tc) Through Hole ITO-220S,
View
SI3460BDV-T1-GE3 - Tags
English
