SI3459DV-T1-E3

Part NumberSI3459DV-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 2.2A 6-TSOP

DatasheetSI3459DV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 2.2A (Tc) 2W (Ta) Surface Mount 6-TSOP

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SI3459DV-T1-E3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SI3459DV

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

220mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

FET Feature

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

All categories