SI3443DDV-T1-GE3
SI3443DDV-T1-GE3
Part Number SI3443DDV-T1-GE3
Description MOSFET P-CHAN 20V TSOP6S
Package / Case SOT-23-6 Thin, TSOT-23-6
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 4A (Ta), 5.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP
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SI3443DDV-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI3443DDV
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A (Ta), 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 47mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 8V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 10V
FET Feature -
Power Dissipation (Max) 1.7W (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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SI3443DDV-T1-GE3 - Tags