Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3127DV
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	89mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	833pF @ 20V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 4.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

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SI1013X-T1-GE3	Vishay Siliconix, P-Channel 20V 350mA (Ta) 250mW (Ta) Surface Mount SC-89-3, TrenchFET®	View
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RRH140P03TB1	Rohm Semiconductor, P-Channel 30V 14A (Ta) 650mW (Ta) Surface Mount 8-SOP,	View
FDS9431A	ON Semiconductor, P-Channel 20V 3.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC,	View
DMPH1006UPSQ-13	Diodes Incorporated, P-Channel 12V 80A (Tc) 3.2W Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
NVATS5A106PLZT4G	ON Semiconductor, P-Channel 40V 33A (Ta) 48W (Tc) Surface Mount ATPAK,	View
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IRF9520PBF	Vishay Siliconix, P-Channel 100V 6.8A (Tc) 60W (Tc) Through Hole TO-220AB,	View
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SI3127DV-T1-GE3

Part NumberSI3127DV-T1-GE3