SI2392DS-T1-GE3

Part NumberSI2392DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 3.1A SOT-23

DatasheetSI2392DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 3.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23

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SI2392DS-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SI2392DS

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

126mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

196pF @ 50V

FET Feature

Power Dissipation (Max)

1.25W (Ta), 2.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

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