Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2356DS-T1-GE3

SI2356DS-T1-GE3

SI2356DS-T1-GE3

Part NumberSI2356DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 4.3A SOT-23

DatasheetSI2356DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount TO-236

To learn about the specification of SI2356DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2356DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2356DS-T1-GE3.
We are offering SI2356DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2356DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2356DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	51mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 20V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2356DS-T1-GE3 - Related Products

	TSM4NB60CH C5G	Taiwan Semiconductor Corporation, N-Channel 600V 4A 50W (Tc) Through Hole TO-251 (IPAK),	View
	AO4406A	Alpha & Omega Semiconductor Inc., N-Channel 30V 13A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,	View
	IXTQ180N10T	IXYS, N-Channel 100V 180A (Tc) 480W (Tc) Through Hole TO-3P, TrenchMV™	View
	RF6E045AJTCR	Rohm Semiconductor, N-Channel 30V 4.5A (Ta) 1W (Tc) Surface Mount TUMT6,	View
	2SK1828TE85LF	Toshiba Semiconductor and Storage, N-Channel 20V 50mA (Ta) 200mW (Ta) Surface Mount SC-59,	View
	SSM3K2615TU,LF	Toshiba Semiconductor and Storage, N-Channel 60V 2A (Ta) 800mW (Ta) Surface Mount UFM, π-MOSV	View
	STD5N95K3	STMicroelectronics, N-Channel 950V 4A (Tc) 90W (Tc) Surface Mount DPAK, SuperMESH3™	View
	STD3NK90ZT4	STMicroelectronics, N-Channel 900V 3A (Tc) 90W (Tc) Surface Mount DPAK, SuperMESH™	View
	HUF75645P3	ON Semiconductor, N-Channel 100V 75A (Tc) 310W (Tc) Through Hole TO-220-3, UltraFET™	View
	BSS131H6327XTSA1	Infineon Technologies, N-Channel 240V 110mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®	View
	SQD50N04-5M6_GE3	Vishay Siliconix, N-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	SISA72ADN-T1-GE3	Vishay Siliconix, N-Channel 40V 25.4A (Ta), 94A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen IV	View

SI2356DS-T1-GE3 - Tags

SI2356DS-T1-GE3 SI2356DS-T1-GE3 PDF SI2356DS-T1-GE3 datasheet SI2356DS-T1-GE3 specification SI2356DS-T1-GE3 image SI2356DS-T1-GE3 India Renesas Electronics India SI2356DS-T1-GE3 buy SI2356DS-T1-GE3 SI2356DS-T1-GE3 price SI2356DS-T1-GE3 distributor SI2356DS-T1-GE3 supplier SI2356DS-T1-GE3 wholesales