SI2351DS-T1-E3

Part NumberSI2351DS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 2.8A SOT23-3

DatasheetSi2351DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2.8A (Tc) 1W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

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SI2351DS-T1-E3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

Si2351DS

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

115mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.1nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 10V

FET Feature

Power Dissipation (Max)

1W (Ta), 2.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

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