Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2342DS-T1-GE3

SI2342DS-T1-GE3

SI2342DS-T1-GE3

Part NumberSI2342DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 8V 6A SOT-23

DatasheetSI2342DS-T1-GE3

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23

To learn about the specification of SI2342DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2342DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2342DS-T1-GE3.
We are offering SI2342DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2342DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2342DS-T1-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	17mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.8nC @ 4.5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	1070pF @ 4V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2342DS-T1-GE3 - Related Products

	IPA60R360P7SXKSA1	Infineon Technologies, N-Channel 600V 9A (Tc) 22W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7	View
	R6003KND3TL1	Rohm Semiconductor, N-Channel 600V 3A (Tc) 44W (Tc) Surface Mount TO-252,	View
	SI2304BDS-T1-GE3	Vishay Siliconix, N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	STB16NF06LT4	STMicroelectronics, N-Channel 60V 16A (Tc) 45W (Tc) Surface Mount D2PAK, STripFET™	View
	CWDM3011N TR13	Central Semiconductor Corp, N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC,	View
	TPHR6503PL,L1Q	Toshiba Semiconductor and Storage, N-Channel 30V 150A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H	View
	FQP6N40C	ON Semiconductor, N-Channel 400V 6A (Tc) 73W (Tc) Through Hole TO-220-3, QFET®	View
	BSZ097N10NS5ATMA1	Infineon Technologies, N-Channel 100V 8A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™	View
	FQP2N40-F080	ON Semiconductor, N-Channel 400V 1.8A (Tc) 40W (Ta) Through Hole TO-220-3, QFET®	View
	SI2302DDS-T1-GE3	Vishay Siliconix, N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	IXFN55N50	IXYS, N-Channel 500V 55A (Tc) 625W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	FDMT80080DC	ON Semiconductor, N-Channel 80V 36A (Ta), 254A (Tc) 3.2W (Ta), 156W (Tc) Surface Mount 8-Dual Cool™88, Dual Cool™, PowerTrench®	View

SI2342DS-T1-GE3 - Tags

SI2342DS-T1-GE3 SI2342DS-T1-GE3 PDF SI2342DS-T1-GE3 datasheet SI2342DS-T1-GE3 specification SI2342DS-T1-GE3 image SI2342DS-T1-GE3 India Renesas Electronics India SI2342DS-T1-GE3 buy SI2342DS-T1-GE3 SI2342DS-T1-GE3 price SI2342DS-T1-GE3 distributor SI2342DS-T1-GE3 supplier SI2342DS-T1-GE3 wholesales