Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2336DS-T1-GE3

SI2336DS-T1-GE3

SI2336DS-T1-GE3

Part NumberSI2336DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 5.2A SOT-23

DatasheetSi2336DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2336DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2336DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2336DS-T1-GE3.
We are offering SI2336DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2336DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si2336DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	560pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 1.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2336DS-T1-GE3 - Related Products

	FDP047N10	ON Semiconductor, N-Channel 100V 120A (Tc) 375W (Tc) Through Hole TO-220-3, PowerTrench®	View
	SI3430DV-T1-E3	Vishay Siliconix, N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP,	View
	IPC70N04S54R6ATMA1	Infineon Technologies, N-Channel 40V 70A (Tc) 50W (Tc) Surface Mount PG-TDSON-8-34, Automotive, AEC-Q101, OptiMOS™	View
	FDBL0200N100	ON Semiconductor, N-Channel 100V 300A (Tc) 429W (Tc) Surface Mount 8-HPSOF,	View
	IXFH26N100X	IXYS, N-Channel 1000V 26A (Tc) 860W (Tc) Through Hole TO-247, HiPerFET™	View
	IRFD320PBF	Vishay Siliconix, N-Channel 400V 490mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	NVMFS5C673NLWFAFT1G	ON Semiconductor, N-Channel 60V 50A (Tc) 46W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101	View
	DMN3009SFG-7	Diodes Incorporated, N-Channel 30V 16A (Ta), 45A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8,	View
	IRFH7085TRPBF	Infineon Technologies, N-Channel 60V 100A (Tc) 156W (Tc) Surface Mount PQFN (5x6), StrongIRFET™	View
	DMN4060SVT-7	Diodes Incorporated, N-Channel 45V 4.8A (Ta) 1.2W (Ta) Surface Mount TSOT-26,	View
	NTLJF4156NTAG	ON Semiconductor, N-Channel 30V 2.5A (Tj) 710mW (Ta) Surface Mount 6-WDFN (2x2),	View
	CSD16342Q5A	Texas Instruments, N-Channel 25V 100A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View

SI2336DS-T1-GE3 - Tags

SI2336DS-T1-GE3 SI2336DS-T1-GE3 PDF SI2336DS-T1-GE3 datasheet SI2336DS-T1-GE3 specification SI2336DS-T1-GE3 image SI2336DS-T1-GE3 India Renesas Electronics India SI2336DS-T1-GE3 buy SI2336DS-T1-GE3 SI2336DS-T1-GE3 price SI2336DS-T1-GE3 distributor SI2336DS-T1-GE3 supplier SI2336DS-T1-GE3 wholesales