Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2336DS-T1-GE3

SI2336DS-T1-GE3

SI2336DS-T1-GE3

Part NumberSI2336DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 5.2A SOT-23

DatasheetSi2336DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2336DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2336DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2336DS-T1-GE3.
We are offering SI2336DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2336DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si2336DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	560pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 1.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2336DS-T1-GE3 - Related Products

	AON6294	Alpha & Omega Semiconductor Inc., N-Channel 100V 17A (Ta), 52A (Tc) 6.2W (Ta), 57W (Tc) Surface Mount 8-DFN (5x6), AlphaMOS	View
	IPD60R1K5CEAUMA1	Infineon Technologies, N-Channel 650V 5A (Tc) 49W (Tc) Surface Mount PG-TO252, CoolMOS™	View
	IPD80R600P7ATMA1	Infineon Technologies, N-Channel 800V 8A (Tc) 60W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	R6046FNZC8	Rohm Semiconductor, N-Channel 600V 46A (Ta) 120W (Tc) Through Hole TO-3PF,	View
	IRL60HS118	Infineon Technologies, N-Channel 60V 18.5A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2),	View
	IXFT30N85XHV	IXYS, N-Channel 850V 30A (Tc) 695W (Tc) Surface Mount TO-268 (IXFT), HiPerFET™	View
	R6024KNJTL	Rohm Semiconductor, N-Channel 600V 24A (Tc) 245W (Tc) Surface Mount LPTS,	View
	VN0104N3-G	Microchip Technology, N-Channel 40V 350mA (Tj) 1W (Tc) Through Hole TO-92-3,	View
	FDD3706	ON Semiconductor, N-Channel 20V 14.7A (Ta), 50A (Tc) 3.8W (Ta), 44W (Tc) Surface Mount D-PAK (TO-252AA), PowerTrench®	View
	SI7414DN-T1-GE3	Vishay Siliconix, N-Channel 60V 5.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	TSM70N750CP ROG	Taiwan Semiconductor Corporation, N-Channel 700V 6A (Tc) 62.5W (Tc) Surface Mount TO-252, (D-Pak),	View
	SI4122DY-T1-GE3	Vishay Siliconix, N-Channel 40V 27.2A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®	View

SI2336DS-T1-GE3 - Tags

SI2336DS-T1-GE3 SI2336DS-T1-GE3 PDF SI2336DS-T1-GE3 datasheet SI2336DS-T1-GE3 specification SI2336DS-T1-GE3 image SI2336DS-T1-GE3 India Renesas Electronics India SI2336DS-T1-GE3 buy SI2336DS-T1-GE3 SI2336DS-T1-GE3 price SI2336DS-T1-GE3 distributor SI2336DS-T1-GE3 supplier SI2336DS-T1-GE3 wholesales