SI2331DS-T1-E3


SI2331DS-T1-E3

Part NumberSI2331DS-T1-E3

Manufacturer

Description

Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI2331DS-T1-E3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingTape & Reel (TR)
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs48mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds780pF @ 6V
FET Feature-
Power Dissipation (Max)710mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

SI2331DS-T1-E3 - Tags

SI2331DS-T1-E3 SI2331DS-T1-E3 PDF SI2331DS-T1-E3 datasheet SI2331DS-T1-E3 specification SI2331DS-T1-E3 image SI2331DS-T1-E3 India Renesas Electronics India SI2331DS-T1-E3 buy SI2331DS-T1-E3 SI2331DS-T1-E3 price SI2331DS-T1-E3 distributor SI2331DS-T1-E3 supplier SI2331DS-T1-E3 wholesales