Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2316BDS-T1-GE3

SI2316BDS-T1-GE3

SI2316BDS-T1-GE3

Part NumberSI2316BDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 4.5A SOT23-3

DatasheetSI2316BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2316BDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2316BDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2316BDS-T1-GE3.
We are offering SI2316BDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2316BDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2316BDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	50mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 1.66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2316BDS-T1-GE3 - Related Products

	STL7N6F7	STMicroelectronics, N-Channel 60V 7A (Tc) 2.4W (Ta) Surface Mount PowerFlat™ (2x2), STripFET™	View
	FDPF770N15A	ON Semiconductor, N-Channel 150V 10A (Tc) 21W (Tc) Through Hole TO-220F, PowerTrench®	View
	SIDR626DP-T1-GE3	Vishay Siliconix, N-Channel 60V 42.8A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC, TrenchFET® Gen IV	View
	TSM4NC50CP ROG	Taiwan Semiconductor Corporation, N-Channel 500V 4A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak),	View
	BSS87,115	Nexperia USA Inc., N-Channel 200V 400mA (Ta) 580mW (Ta), 12.5W (Tc) Surface Mount SOT-89,	View
	CSD18535KTTT	Texas Instruments, N-Channel 60V 200A (Ta), 279A (Tc) 300W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™	View
	DMT10H015LSS-13	Diodes Incorporated, N-Channel 100V 8.3A (Ta) 1.2W (Ta) Surface Mount 8-SO,	View
	FDMC8010DC	ON Semiconductor, N-Channel 30V 37A (Ta) 3W (Ta) Surface Mount 8-PQFN (3.3x3.3),	View
	DMN26D0UT-7	Diodes Incorporated, N-Channel 20V 230mA (Ta) 300mW (Ta) Surface Mount SOT-523,	View
	BSC080N03LSGATMA1	Infineon Technologies, N-Channel 30V 14A (Ta), 53A (Tc) 2.5W (Ta), 35W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	HUFA76429D3	ON Semiconductor, N-Channel 60V 20A (Tc) 110W (Tc) Through Hole I-PAK, UltraFET™	View
	IRFIZ48GPBF	Vishay Siliconix, N-Channel 60V 37A (Tc) 50W (Tc) Through Hole TO-220-3,	View

SI2316BDS-T1-GE3 - Tags

SI2316BDS-T1-GE3 SI2316BDS-T1-GE3 PDF SI2316BDS-T1-GE3 datasheet SI2316BDS-T1-GE3 specification SI2316BDS-T1-GE3 image SI2316BDS-T1-GE3 India Renesas Electronics India SI2316BDS-T1-GE3 buy SI2316BDS-T1-GE3 SI2316BDS-T1-GE3 price SI2316BDS-T1-GE3 distributor SI2316BDS-T1-GE3 supplier SI2316BDS-T1-GE3 wholesales