SI2312BDS-T1-GE3
SI2312BDS-T1-GE3
Part Number SI2312BDS-T1-GE3
Description MOSFET N-CH 20V 3.9A SOT23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2312BDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2312BDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2312BDS-T1-GE3.
We are offering SI2312BDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2312BDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si2312BDS
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 31mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
SI2312BDS-T1-GE3 - Related ProductsMore >>
PSMN050-80BS,118
Nexperia USA Inc., N-Channel 80V 22A (Tc) 56W (Tc) Surface Mount D2PAK,
View
ZXMN4A06GTA
Diodes Incorporated, N-Channel 40V 5A (Ta) 2W (Ta) Surface Mount SOT-223,
View
BSZ130N03MSGATMA1
Infineon Technologies, N-Channel 30V 9A (Ta), 35A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
View
MCU60N04-TP
Micro Commercial Co, N-Channel 40V 60A 1.25W Surface Mount D-Pak,
View
IPP60R180C7XKSA1
Infineon Technologies, N-Channel 600V 13A (Tc) 68W (Tc) Through Hole PG-TO220-3-1, CoolMOS™ C7
View
TN2425N8-G
Microchip Technology, N-Channel 25V 480mA (Tj) 1.6W (Tc) Surface Mount SOT-89-3,
View
AUIRF1404Z
Infineon Technologies, N-Channel 40V 160A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®
View
DMTH4004SCTB-13
Diodes Incorporated, N-Channel 40V 100A (Tc) 4.7W (Ta), 136W (Tc) Surface Mount TO-263AB,
View
SN7002WH6327XTSA1
Infineon Technologies, N-Channel 60V 230mA (Ta) 500mW (Ta) Surface Mount PG-SOT323-3, SIPMOS®
View
FDD8444
ON Semiconductor, N-Channel 40V 145A (Tc) 153W (Tc) Surface Mount TO-252AA, PowerTrench®
View
STLD200N4F6AG
STMicroelectronics, N-Channel 40V 120A (Tc) 158W (Tc) Surface Mount PowerFlat™ (5x6) Dual Side, STripFET™ F6
View
STD26NF10
STMicroelectronics, N-Channel 100V 25A (Tc) 100W (Tc) Surface Mount DPAK, STripFET™ II
View
SI2312BDS-T1-GE3 - Tags