SI2312BDS-T1-GE3
SI2312BDS-T1-GE3
Part Number SI2312BDS-T1-GE3 Description MOSFET N-CH 20V 3.9A SOT23-3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
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SI2312BDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si2312BDS Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 31mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 750mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
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