Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2307CDS-T1-GE3

SI2307CDS-T1-GE3

SI2307CDS-T1-GE3

Part NumberSI2307CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 3.5A SOT23-3

DatasheetSI2307CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2307CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2307CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2307CDS-T1-GE3.
We are offering SI2307CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2307CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2307CDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	88mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.2nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.1W (Ta), 1.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2307CDS-T1-GE3 - Related Products

	DMPH6050SFGQ-7	Diodes Incorporated, P-Channel 60V 6.1A (Ta), 18A (Tc) 1.2W (Ta) Surface Mount PowerDI3333-8, Automotive, AEC-Q101	View
	IXTT16P60P	IXYS, P-Channel 600V 16A (Tc) 460W (Tc) Surface Mount TO-268, PolarP™	View
	RQ5A030APTL	Rohm Semiconductor, P-Channel 12V 3A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	IRF9Z34PBF	Vishay Siliconix, P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-220AB,	View
	ZVP2110GTA	Diodes Incorporated, P-Channel 100V 310mA (Ta) 2W (Ta) Surface Mount SOT-223,	View
	BS250FTA	Diodes Incorporated, P-Channel 45V 90mA (Ta) 330mW (Ta) Surface Mount SOT-23-3,	View
	PMF170XP,115	Nexperia USA Inc., P-Channel 20V 1A (Ta) 290mW (Ta), 1.67W (Tc) Surface Mount SC-70,	View
	SQJ433EP-T1_GE3	Vishay Siliconix, P-Channel 30V 75A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	SSM3J372R,LF	Toshiba Semiconductor and Storage, P-Channel 30V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	FDD306P	ON Semiconductor, P-Channel 12V 6.7A (Ta) 52W (Ta) Surface Mount TO-252, PowerTrench®	View
	DMG4413LSS-13	Diodes Incorporated, P-Channel 30V 10.5A (Ta) 1.7W (Ta) Surface Mount 8-SOP,	View
	NTLUS3A18PZTAG	ON Semiconductor, P-Channel 20V 5.1A (Ta) 700mW (Ta) Surface Mount 6-UDFN (2x2), µCool™	View

SI2307CDS-T1-GE3 - Tags

SI2307CDS-T1-GE3 SI2307CDS-T1-GE3 PDF SI2307CDS-T1-GE3 datasheet SI2307CDS-T1-GE3 specification SI2307CDS-T1-GE3 image SI2307CDS-T1-GE3 India Renesas Electronics India SI2307CDS-T1-GE3 buy SI2307CDS-T1-GE3 SI2307CDS-T1-GE3 price SI2307CDS-T1-GE3 distributor SI2307CDS-T1-GE3 supplier SI2307CDS-T1-GE3 wholesales