SI2307CDS-T1-GE3
SI2307CDS-T1-GE3
Part Number SI2307CDS-T1-GE3
Description MOSFET P-CH 30V 3.5A SOT23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 30V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2307CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2307CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2307CDS-T1-GE3.
We are offering SI2307CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2307CDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2307CDS
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 15V
FET Feature -
Power Dissipation (Max) 1.1W (Ta), 1.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
SI2307CDS-T1-GE3 - Related ProductsMore >>
AON2409
Alpha & Omega Semiconductor Inc., P-Channel 30V 8A (Ta) 2.8W (Ta) Surface Mount 6-DFN-EP (2x2),
View
NTF5P03T3G
ON Semiconductor, P-Channel 30V 3.7A (Ta) 1.56W (Ta) Surface Mount SOT-223,
View
IRLML6402TRPBF
Infineon Technologies, P-Channel 20V 3.7A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
STD35P6LLF6
STMicroelectronics, P-Channel 60V 35A (Tc) 70W (Tc) Surface Mount DPAK, STripFET™ F6
View
SI7463DP-T1-E3
Vishay Siliconix, P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SSM3J35CT,L3F
Toshiba Semiconductor and Storage, P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount CST3, π-MOSVI
View
RV2C001ZPT2L
Rohm Semiconductor, P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount DFN1006-3 (VML1006),
View
FQB1P50TM
ON Semiconductor, P-Channel 500V 1.5A (Tc) 3.13W (Ta), 63W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
View
IRFI9640GPBF
Vishay Siliconix, P-Channel 200V 6.1A (Tc) 40W (Tc) Through Hole TO-220-3,
View
SI2325DS-T1-E3
Vishay Siliconix, P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
AO3413
Alpha & Omega Semiconductor Inc., P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,
View
SI2337DS-T1-E3
Vishay Siliconix, P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
SI2307CDS-T1-GE3 - Tags