SI1489EDH-T1-GE3

Part NumberSI1489EDH-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 8V 2A SOT-363

DatasheetSI1489EDH-T1-GE3

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 8V 2A (Tc) 2.8W (Tc) Surface Mount SOT-363

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SI1489EDH-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SI1489EDH-T1-GE3

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

48mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Vgs (Max)

±5V

FET Feature

Power Dissipation (Max)

2.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-363

Package / Case

6-TSSOP, SC-88, SOT-363

All categories

SI1489EDH-T1-GE3

Part NumberSI1489EDH-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 8V 2A SOT-363

DatasheetSI1489EDH-T1-GE3

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 8V 2A (Tc) 2.8W (Tc) Surface Mount SOT-363

SI1489EDH-T1-GE3 - Product Attributes

SI1489EDH-T1-GE3 - Tags