SI1065X-T1-GE3


SI1065X-T1-GE3

Part NumberSI1065X-T1-GE3

Manufacturer

Description

Datasheet

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI1065X-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs156mOhm @ 1.18A, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.8nC @ 5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds480pF @ 6V
FET Feature-
Power Dissipation (Max)236mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-89-6
Package / CaseSOT-563, SOT-666

SI1065X-T1-GE3 - Tags

SI1065X-T1-GE3 SI1065X-T1-GE3 PDF SI1065X-T1-GE3 datasheet SI1065X-T1-GE3 specification SI1065X-T1-GE3 image SI1065X-T1-GE3 India Renesas Electronics India SI1065X-T1-GE3 buy SI1065X-T1-GE3 SI1065X-T1-GE3 price SI1065X-T1-GE3 distributor SI1065X-T1-GE3 supplier SI1065X-T1-GE3 wholesales