SI1062X-T1-GE3
SI1062X-T1-GE3
Part Number SI1062X-T1-GE3 Description MOSFET N-CH 20V SC-89 Package / Case SC-89, SOT-490Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 220mW (Ta) Surface Mount SC-89-3
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SI1062X-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI1062X Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 420mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 43pF @ 10V FET Feature - Power Dissipation (Max) 220mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-89-3 Package / Case SC-89, SOT-490
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