SI1062X-T1-GE3
SI1062X-T1-GE3
Part Number SI1062X-T1-GE3
Description MOSFET N-CH 20V SC-89
Package / Case SC-89, SOT-490
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 20V 220mW (Ta) Surface Mount SC-89-3
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SI1062X-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI1062X
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 420mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 43pF @ 10V
FET Feature -
Power Dissipation (Max) 220mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89-3
Package / Case SC-89, SOT-490
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