SI1058X-T1-GE3

Part NumberSI1058X-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V SC89

DatasheetSI1058X

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 236mW (Ta) Surface Mount SC-89-6

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SI1058X-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SI1058X

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

91mOhm @ 1.3A, 4.5V

Vgs(th) (Max) @ Id

1.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.9nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

380pF @ 10V

FET Feature

Power Dissipation (Max)

236mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-6

Package / Case

SOT-563, SOT-666

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