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SI1050X-T1-GE3

SI1050X-T1-GE3

Part NumberSI1050X-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 8V 1.34A SC-89-6

DatasheetSI1050X

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 8V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89-6

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SI1050X-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI1050X
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	1.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	86mOhm @ 1.34A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.6nC @ 5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	585pF @ 4V
FET Feature	-
Power Dissipation (Max)	236mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-89-6
Package / Case	SOT-563, SOT-666

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