SI1032X-T1-GE3
SI1032X-T1-GE3
Part Number SI1032X-T1-GE3
Description MOSFET N-CH 20V 200MA SC89-3
Package / Case SC-89, SOT-490
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 20V 200mA (Ta) 300mW (Ta) Surface Mount SC-89-3
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SI1032X-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si1032R,X
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
Vgs (Max) ±6V
FET Feature -
Power Dissipation (Max) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89-3
Package / Case SC-89, SOT-490
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SI1032X-T1-GE3 - Tags