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SI1029X-T1-GE3

SI1029X-T1-GE3

Part NumberSI1029X-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N/P-CH 60V SC89-6

DatasheetSi1029X

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel 60V 305mA, 190mA 250mW Surface Mount SC-89-6

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SI1029X-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	Si1029X
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	305mA, 190mA
Rds On (Max) @ Id, Vgs	1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	30pF @ 25V
Power - Max	250mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SC-89-6
Base Part Number	SI1029

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SI1029X-T1-GE3 - Tags

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