SI1021R-T1-GE3
SI1021R-T1-GE3
Part Number SI1021R-T1-GE3 Description MOSFET P-CH 60V 190MA SC-75A Package / Case SC-75AUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 60V 190mA (Ta) 250mW (Ta) Surface Mount SC-75A
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SI1021R-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI1021R Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 15V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 23pF @ 25V FET Feature - Power Dissipation (Max) 250mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-75A Package / Case SC-75A
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