SI1011X-T1-GE3


SI1011X-T1-GE3

Part NumberSI1011X-T1-GE3

Manufacturer

Description

Datasheet

Package / CaseSC-89, SOT-490

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI1011X-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingTape & Reel (TR)
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs640mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds62pF @ 6V
FET Feature-
Power Dissipation (Max)190mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-89-3
Package / CaseSC-89, SOT-490

SI1011X-T1-GE3 - Tags

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