SCTW90N65G2V

Part NumberSCTW90N65G2V

ManufacturerSTMicroelectronics

DescriptionSILICON CARBIDE POWER MOSFET 650

DatasheetSCTW90N65G2V

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 90A (Tc) 390W (Tc) Through Hole HiP247™

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SCTW90N65G2V - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SCTW90N65G2V

Standard Package

Manufacturer

STMicroelectronics

Series

Part Status

Active

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

25mOhm @ 50A, 18V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

157nC @ 18V

Vgs (Max)

+22V, -10V

Input Capacitance (Ciss) (Max) @ Vds

3300pF @ 400V

FET Feature

Power Dissipation (Max)

390W (Tc)

Operating Temperature

-55°C ~ 200°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

HiP247™

Package / Case

TO-247-3

All categories

SCTW90N65G2V

Part NumberSCTW90N65G2V

ManufacturerSTMicroelectronics

DescriptionSILICON CARBIDE POWER MOSFET 650

DatasheetSCTW90N65G2V

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 90A (Tc) 390W (Tc) Through Hole HiP247™

SCTW90N65G2V - Product Attributes

SCTW90N65G2V - Tags