RW1C020UNT2R

Part NumberRW1C020UNT2R

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 20V 2A WEMT6

DatasheetRW1C020UN

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 2A (Ta) 400mW (Ta) Surface Mount 6-WEMT

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RW1C020UNT2R - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

RW1C020UN

Standard Package

Manufacturer

Rohm Semiconductor

Series

Packaging

Cut Tape (CT)

Part Status

Discontinued at Digi-Key

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

105mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

180pF @ 10V

FET Feature

Power Dissipation (Max)

400mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WEMT

Package / Case

SOT-563, SOT-666

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