RT1C060UNTR
RT1C060UNTR
Part Number RT1C060UNTR
Description MOSFET N-CH 20V 6A TSST8
Package / Case 8-SMD, Flat Lead
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 20V 6A (Ta) 650mW (Ta) Surface Mount 8-TSST
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RT1C060UNTR - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RT1C060UN
Standard Package 3000
Manufacturer Rohm Semiconductor
Series -
Packaging Tape & Reel (TR)
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 28mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 10V
FET Feature -
Power Dissipation (Max) 650mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSST
Package / Case 8-SMD, Flat Lead
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