RQK0609CQDQS#H1

Part NumberRQK0609CQDQS#H1

ManufacturerRenesas Electronics America

DescriptionMOSFET P-CH UPAK

DatasheetRQK0609CQDQS

Package / CaseTO-243AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 4A (Ta) 1.5W (Ta) Surface Mount UPAK

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RQK0609CQDQS#H1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

RQK0609CQDQS

Standard Package

1000

Manufacturer

Renesas Electronics America

Series

Part Status

Last Time Buy

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

100mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

470pF @ 10V

FET Feature

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

UPAK

Package / Case

TO-243AA

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