RQ3E150MNTB1

Part NumberRQ3E150MNTB1

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 30V 15A HSMT8

DatasheetRQ3E150MN Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 15A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

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RQ3E150MNTB1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

RQ3E150MN Datasheet

Standard Package

3000

Manufacturer

Rohm Semiconductor

Series

Packaging

Tape & Reel (TR)

Part Status

Not For New Designs

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 15V

FET Feature

Power Dissipation (Max)

2W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HSMT (3.2x3)

Package / Case

8-PowerVDFN

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