RN2712JE(TE85L,F)


RN2712JE(TE85L,F)

Part NumberRN2712JE(TE85L,F)

Manufacturer

Description

Datasheet

Package / CaseSOT-553

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

RN2712JE(TE85L,F) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
Standard Package1
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor Type2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition200MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSOT-553
Supplier Device PackageESV

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RN2712JE(TE85L,F) - Tags

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