RN2712JE(TE85L,F)

Part NumberRN2712JE(TE85L,F)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS 2PNP PREBIAS 0.1W ESV

DatasheetRN2712JE-13JE

Package / CaseSOT-553

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV

To learn about the specification of RN2712JE(TE85L,F), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN2712JE(TE85L,F) with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN2712JE(TE85L,F).
We are offering RN2712JE(TE85L,F) for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN2712JE(TE85L,F) - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	RN2712JE-13JE
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	22kOhms
Resistor - Emitter Base (R2)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	200MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-553
Supplier Device Package	ESV

RN2712JE(TE85L,F) - Related Products

More >>

PUMB2,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP,	View
DMA964020R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 125mW Surface Mount SSMini6-F3-B,	View
UMA4NTR	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT5,	View
DMA561010R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini5-F3-B,	View
RN2902,LF(CT	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6,	View
RN2961(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6,	View
RN2608(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6,	View
DDA144EU-7-F	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363,	View
DMA561080R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini5-F3-B,	View
UMA1NTR	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT5,	View
DMA2610F0R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount Mini5-G3-B,	View
RN2704JE(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV,	View

RN2712JE(TE85L,F) - Tags

RN2712JE(TE85L,F) RN2712JE(TE85L,F) PDF RN2712JE(TE85L,F) datasheet RN2712JE(TE85L,F) specification RN2712JE(TE85L,F) image RN2712JE(TE85L,F) India Renesas Electronics India RN2712JE(TE85L,F) buy RN2712JE(TE85L,F) RN2712JE(TE85L,F) price RN2712JE(TE85L,F) distributor RN2712JE(TE85L,F) supplier RN2712JE(TE85L,F) wholesales