RN2709JE(TE85L,F)

Part NumberRN2709JE(TE85L,F)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS 2PNP PREBIAS 0.1W ESV

DatasheetRN2707JE-09JE

Package / CaseSOT-553

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV

To learn about the specification of RN2709JE(TE85L,F), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN2709JE(TE85L,F) with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN2709JE(TE85L,F).
We are offering RN2709JE(TE85L,F) for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN2709JE(TE85L,F) - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	RN2707JE-09JE
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	47kOhms
Resistor - Emitter Base (R2)	22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	200MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-553
Supplier Device Package	ESV

RN2709JE(TE85L,F) - Related Products

More >>

IMB2AT110	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6,	View
DMA261050R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount Mini5-G3-B,	View
DMA961010R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 125mW Surface Mount SSMini5-F4-B,	View
DMA961040R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 125mW Surface Mount SSMini5-F4-B,	View
UMA5NTR	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT5,	View
FMA3AT148	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT5,	View
DMA264010R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount Mini6-G4-B,	View
DMA5610M0R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini5-F3-B,	View
DMA566040R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini6-F3-B,	View
RN2607(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6,	View
DMA9610F0R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 125mW Surface Mount SSMini5-F4-B,	View
RN2701JE(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV,	View

RN2709JE(TE85L,F) - Tags

RN2709JE(TE85L,F) RN2709JE(TE85L,F) PDF RN2709JE(TE85L,F) datasheet RN2709JE(TE85L,F) specification RN2709JE(TE85L,F) image RN2709JE(TE85L,F) India Renesas Electronics India RN2709JE(TE85L,F) buy RN2709JE(TE85L,F) RN2709JE(TE85L,F) price RN2709JE(TE85L,F) distributor RN2709JE(TE85L,F) supplier RN2709JE(TE85L,F) wholesales