RN2701JE(TE85L,F)

Part NumberRN2701JE(TE85L,F)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS 2PNP PREBIAS 0.1W ESV

DatasheetRN2701JE-06JE

Package / CaseSOT-553

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV

To learn about the specification of RN2701JE(TE85L,F), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN2701JE(TE85L,F) with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN2701JE(TE85L,F).
We are offering RN2701JE(TE85L,F) for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN2701JE(TE85L,F) - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	RN2701JE-06JE
Standard Package	4000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	4.7kOhms
Resistor - Emitter Base (R2)	4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	200MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-553
Supplier Device Package	ESV

RN2701JE(TE85L,F) - Related Products

More >>

EMB11FHAT2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount EMT6, Automotive, AEC-Q101	View
RN2707JE(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ESV,	View
RN2961(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6,	View
UMB3NTN	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6,	View
DDA144EU-7-F	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363,	View
RN2502(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 300mW Surface Mount SMV,	View
IMB11AT110	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6,	View
PRMB11Z	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 480mW Surface Mount DFN1412-6, Automotive, AEC-Q101	View
DDA143TU-7-F	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363,	View
EMB61T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 50mA 250MHz 150mW Surface Mount EMT6,	View
MUN5116DW1T1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363,	View
RN2606(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6,	View

RN2701JE(TE85L,F) - Tags

RN2701JE(TE85L,F) RN2701JE(TE85L,F) PDF RN2701JE(TE85L,F) datasheet RN2701JE(TE85L,F) specification RN2701JE(TE85L,F) image RN2701JE(TE85L,F) India Renesas Electronics India RN2701JE(TE85L,F) buy RN2701JE(TE85L,F) RN2701JE(TE85L,F) price RN2701JE(TE85L,F) distributor RN2701JE(TE85L,F) supplier RN2701JE(TE85L,F) wholesales