RN2312(TE85L,F)

Part NumberRN2312(TE85L,F)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS PREBIAS PNP 0.1W USM

DatasheetRN2312,13

Package / CaseSC-70, SOT-323

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM

To learn about the specification of RN2312(TE85L,F), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN2312(TE85L,F) with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN2312(TE85L,F).
We are offering RN2312(TE85L,F) for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN2312(TE85L,F) - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet	RN2312,13
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	200MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM
Base Part Number	RN231*

RN2312(TE85L,F) - Related Products

More >>

DTA114YUAT106	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount UMT3,	View
DTA144EM3T5G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 260mW Surface Mount SOT-723,	View
DTA114EEBTL	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 50mA 250MHz 150mW Surface Mount EMT3,	View
DTA124XU3HZGT106	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount UMT3, Automotive, AEC-Q101	View
DRA3115T0L	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 100mW Surface Mount SSSMini3-F2-B,	View
DRA3143X0L	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200mW Surface Mount SSSMini3-F2-B,	View
DRA2115T0L	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200mW Surface Mount Mini3-G3-B,	View
DTA124EUA-TP	Micro Commercial Co, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-323,	View
DTA115EU3T106	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount UMT3,	View
MMUN2134LT1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236),	View
DTA014EUBTL	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 50mA 250MHz 200mW Surface Mount UMT3F,	View
DRA5143Z0L	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount SMini3-F2-B,	View

RN2312(TE85L,F) - Tags

RN2312(TE85L,F) RN2312(TE85L,F) PDF RN2312(TE85L,F) datasheet RN2312(TE85L,F) specification RN2312(TE85L,F) image RN2312(TE85L,F) India Renesas Electronics India RN2312(TE85L,F) buy RN2312(TE85L,F) RN2312(TE85L,F) price RN2312(TE85L,F) distributor RN2312(TE85L,F) supplier RN2312(TE85L,F) wholesales