RN2109ACT(TPL3)


RN2109ACT(TPL3)

Part NumberRN2109ACT(TPL3)

Manufacturer

Description

Datasheet

Package / CaseSC-101, SOT-883

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

RN2109ACT(TPL3) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package1
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingCut Tape (CT)
Part StatusDiscontinued at Digi-Key
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)80mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageCST3

RN2109ACT(TPL3) - Tags

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