RN2106ACT(TPL3)

Part NumberRN2106ACT(TPL3)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS PREBIAS PNP 0.1W CST3

DatasheetRN2101ACT-06ACT

Package / CaseSC-101, SOT-883

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 80mA 100mW Surface Mount CST3

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RN2106ACT(TPL3) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Datasheet

RN2101ACT-06ACT

Standard Package

10000

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Tape & Reel (TR)

Part Status

Active

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

80mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Power - Max

100mW

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Supplier Device Package

CST3

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