RN1909FE(TE85L,F)

Part NumberRN1909FE(TE85L,F)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS 2NPN PREBIAS 0.1W ES6

DatasheetRN1907FE-09FE

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

To learn about the specification of RN1909FE(TE85L,F), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN1909FE(TE85L,F) with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN1909FE(TE85L,F).
We are offering RN1909FE(TE85L,F) for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN1909FE(TE85L,F) - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	RN1907FE-09FE
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	47kOhms
Resistor - Emitter Base (R2)	22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6

RN1909FE(TE85L,F) - Related Products

More >>

IMH4AT110	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6,	View
RN1509(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 300mW Surface Mount SMV,	View
NSVMUN5212DW1T1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363,	View
NSBC114YDP6T5G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 339mW Surface Mount SOT-963,	View
PUMH1,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230MHz 300mW Surface Mount 6-TSSOP,	View
ADC144EUQ-13	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 100mA 250MHz 270mW Surface Mount SOT-363, Automotive, AEC-Q101	View
EMG3T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT3,	View
DMC2640L0R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount Mini6-G4-B,	View
DMC561010R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini5-F3-B,	View
NSVMUN5211DW1T2G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 385mW Surface Mount SC-88/SC70-6/SOT-363, Automotive, AEC-Q101	View
PUMH17,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP,	View
SMUN5211DW1T1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363,	View

RN1909FE(TE85L,F) - Tags

RN1909FE(TE85L,F) RN1909FE(TE85L,F) PDF RN1909FE(TE85L,F) datasheet RN1909FE(TE85L,F) specification RN1909FE(TE85L,F) image RN1909FE(TE85L,F) India Renesas Electronics India RN1909FE(TE85L,F) buy RN1909FE(TE85L,F) RN1909FE(TE85L,F) price RN1909FE(TE85L,F) distributor RN1909FE(TE85L,F) supplier RN1909FE(TE85L,F) wholesales