RN1902FE,LF(CT

Part NumberRN1902FE,LF(CT

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS 2NPN PREBIAS 0.1W ES6

DatasheetRN1901FE-06FE

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

To learn about the specification of RN1902FE,LF(CT, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN1902FE,LF(CT with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN1902FE,LF(CT.
We are offering RN1902FE,LF(CT for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN1902FE,LF(CT - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Datasheet

RN1901FE-06FE

Standard Package

4000

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Tape & Reel (TR)

Part Status

Active

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

1kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

100mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

ES6

All categories