RN1703JE(TE85L,F)

Part NumberRN1703JE(TE85L,F)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS 2NPN PREBIAS 0.1W ESV

DatasheetRN1701JE-06JE

Package / CaseSOT-553

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV

To learn about the specification of RN1703JE(TE85L,F), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN1703JE(TE85L,F) with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN1703JE(TE85L,F).
We are offering RN1703JE(TE85L,F) for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN1703JE(TE85L,F) - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	RN1701JE-06JE
Standard Package	4000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	22kOhms
Resistor - Emitter Base (R2)	22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-553
Supplier Device Package	ESV

RN1703JE(TE85L,F) - Related Products

More >>

PEMH10,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666,	View
RN1907FE,LF(CT	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6,	View
DDC143ZU-7-F	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363,	View
RN1604(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SM6,	View
DMC562000R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini5-F3-B,	View
DDC123JU-7-F	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363,	View
DMC264050R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount Mini6-G4-B,	View
IMH23T110	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 20V 600mA 150MHz 300mW Surface Mount SMT6,	View
NSBC114EDP6T5G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 408mW Surface Mount SOT-963,	View
NSVMUN5215DW1T1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363,	View
EMH25FHAT2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount EMT6, Automotive, AEC-Q101	View
RN1507(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMV,	View

RN1703JE(TE85L,F) - Tags

RN1703JE(TE85L,F) RN1703JE(TE85L,F) PDF RN1703JE(TE85L,F) datasheet RN1703JE(TE85L,F) specification RN1703JE(TE85L,F) image RN1703JE(TE85L,F) India Renesas Electronics India RN1703JE(TE85L,F) buy RN1703JE(TE85L,F) RN1703JE(TE85L,F) price RN1703JE(TE85L,F) distributor RN1703JE(TE85L,F) supplier RN1703JE(TE85L,F) wholesales