RN1421TE85LF

Part NumberRN1421TE85LF

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS PREBIAS NPN 200MW SMINI

DatasheetRN142x

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 800mA 300MHz 200mW Surface Mount S-Mini

To learn about the specification of RN1421TE85LF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN1421TE85LF with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN1421TE85LF.
We are offering RN1421TE85LF for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN1421TE85LF - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Datasheet

RN142x

Standard Package

3000

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Tape & Reel (TR)

Part Status

Active

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

1 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 100mA, 1V

Vce Saturation (Max) @ Ib, Ic

250mV @ 2mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

300MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

S-Mini

Base Part Number

RN142*

All categories