RN1309,LF

Part NumberRN1309,LF

ManufacturerToshiba Semiconductor and Storage

DescriptionX34 PB-F USM TRANSISTOR PD 100MW

DatasheetRN1307-09

Package / CaseSC-70, SOT-323

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount USM

To learn about the specification of RN1309,LF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN1309,LF with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN1309,LF.
We are offering RN1309,LF for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN1309,LF - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Datasheet

RN1307-09

Standard Package

3000

Manufacturer

Toshiba Semiconductor and Storage

Series

Part Status

Active

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

22 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

100mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

USM

All categories