RN1113ACT(TPL3)

Part NumberRN1113ACT(TPL3)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS PREBIAS NPN 0.1W CST3

DatasheetRN1112ACT-13ACT

Package / CaseSC-101, SOT-883

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3

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RN1113ACT(TPL3) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Datasheet

RN1112ACT-13ACT

Standard Package

10000

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Tape & Reel (TR)

Part Status

Active

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

80mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Power - Max

100mW

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Supplier Device Package

CST3

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