RN1110(T5L,F,T)


RN1110(T5L,F,T)

Part NumberRN1110(T5L,F,T)

Manufacturer

Description

Datasheet

Package / CaseSC-75, SOT-416

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

RN1110(T5L,F,T) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package3000
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingTape & Reel (TR)
Part StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageSSM

RN1110(T5L,F,T) - Tags

RN1110(T5L,F,T) RN1110(T5L,F,T) PDF RN1110(T5L,F,T) datasheet RN1110(T5L,F,T) specification RN1110(T5L,F,T) image RN1110(T5L,F,T) India Renesas Electronics India RN1110(T5L,F,T) buy RN1110(T5L,F,T) RN1110(T5L,F,T) price RN1110(T5L,F,T) distributor RN1110(T5L,F,T) supplier RN1110(T5L,F,T) wholesales