RN1109,LF(CT

Part NumberRN1109,LF(CT

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS PREBIAS NPN 100MW SSM

DatasheetRN1107-09

Package / CaseSC-75, SOT-416

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM

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RN1109,LF(CT - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Datasheet

RN1107-09

Standard Package

3000

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Tape & Reel (TR)

Part Status

Active

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

22 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

100mW

Mounting Type

Surface Mount

Package / Case

SC-75, SOT-416

Supplier Device Package

SSM

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