RN1106MFV,L3F


RN1106MFV,L3F

Part NumberRN1106MFV,L3F

Manufacturer

Description

Datasheet

Package / CaseSOT-723

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

RN1106MFV,L3F - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package8000
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingTape & Reel (TR)
Part StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM

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RN1106MFV,L3F - Tags

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