RN1106MFV(TL3,T)

Part NumberRN1106MFV(TL3,T)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS PREBIAS NPN 0.15W VESM

DatasheetRN1101-6MFV

Package / CaseSOT-723

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM

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RN1106MFV(TL3,T) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Datasheet

RN1101-6MFV

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Cut Tape (CT)

Part Status

Obsolete

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 5mA

Current - Collector Cutoff (Max)

500nA

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

VESM

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