RN1106CT(TPL3)


RN1106CT(TPL3)

Part NumberRN1106CT(TPL3)

Manufacturer

Description

Datasheet

Package / CaseSC-101, SOT-883

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

RN1106CT(TPL3) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package10000
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingTape & Reel (TR)
Part StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)20V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Power - Max50mW
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageCST3

RN1106CT(TPL3) - Tags

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