RN1106,LF(CT
RN1106,LF(CT
Part Number RN1106,LF(CT
Description TRANS PREBIAS NPN 50V 0.1W SSM
Package / Case SC-75, SOT-416
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM
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RN1106,LF(CT - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet RN1101-06
Standard Package 1
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SSM
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